| Material | Ceramic, SiC , Al₂O₃ , SiO₂,Al₄C₃ |
|---|---|
| Insulation Strength | ≥15KV/mm |
| Operating Temperature | Up To 1000°C |
| Size | Various Sizes Available |
| Surface Roughness | 0.3-08 Um |
| Heat Dissipation | Efficient |
|---|---|
| Material | Ceramic, SiC , Al₂O₃ , SiO₂,Al₄C₃ |
| Durability | Long-lasting |
| Temperature Resistance | <700℃ |
| Application | Transistor, MOSFET, Schottky Diode, IGBT, High-density Switching Power Supply, High-frequency Communication Signal Equipment, High Frequency Welding Machines And Other Electronic Devices |
| Weight | Lightweight |
|---|---|
| Heat Dissipation | Efficient |
| Surface Roughness | 0.3-08 Um |
| Density | 3.7g/cm^3 |
| Insulation Strength | ≥15KV/mm |
| Material | Ceramic, SiC , Al₂O₃ , SiO₂,Al₄C₃ |
|---|---|
| Warpage | ≤2‰ |
| Mechanical Strength | ≥3000MPa |
| Heat Dissipation | Efficient |
| Durability | Long-lasting |
| Weight | Lightweight |
|---|---|
| Size | Various Sizes Available |
| Thermal Conductivity | 9~180 MW/m.K |
| Surface Roughness | 0.3-08 Um |
| Warpage | ≤2‰ |
| Thermal Conductivity | 9~180 MW/m.K |
|---|---|
| Warpage | ≤2‰ |
| Durability | Long-lasting |
| Temperature Resistance | <700℃ |
| Mechanical Strength | ≥3000MPa |